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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
August 2006
FSQ510, FSQ510H -- Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter - Low EMI and High Efficiency
Features
Uses a DMOS Integrated Power Switch Optimized for Quasi-Resonant Converter (QRC) Low EMI through Variable Frequency Control and Inherent Frequency Modulation High Efficiency through Minimum Voltage Switching Extended Quasi-Resonant Switching for Wide Load Ranges Small Frequency Variation for Wide Load Ranges Advanced Burst-Mode Operation for Low Standby Power Consumption Pulse-by-Pulse Current Limit Various Protection Functions: Overload Protection (OLP), Abnormal Over-Current Protection (AOCP), Internal Thermal Shutdown (TSD) with Hysteresis Under-Voltage Lockout (UVLO) with Hysteresis Internal Start-up Circuit Internal High-Voltage SenseFET (700V) Built-in Soft Start (5ms)
Applications
Cell Phone Chargers Auxiliary Power Supplies for PC and White Goods
Description
A Quasi-Resonant Converter (QRC) generally shows lower EMI and higher power conversion efficiency than a conventional hard-switched converter with a fixed switching frequency. The FSQ510(H) is an integrated Pulse-Width Modulation (PWM) controller and SenseFET specifically designed for quasi-resonant offline Switch Mode Power Supplies (SMPS) with minimal external components. The PWM controller includes an integrated fixed-frequency oscillator, Under-Voltage Lockout (UVLO), Leading Edge Blanking (LEB), optimized gate driver, internal soft start, temperaturecompensated precise current sources for loop compensation, and self-protection circuitry. Compared with discrete MOSFET and PWM controller solution, the FSQ510(H) can reduce total cost, component count, size and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform that is well suited for cost-effective designs of quasi-resonant switching flyback converters.
Ordering Information
Part Number FSQ510 Maximum Output Power (1) Operating PbCurrent RDS(ON) 230VAC 15%(2) 85-265VAC Package Temperature Free Limit (MAX) Open Open (3) (3) Range Adapter (4) Adapter (4) Frame Frame 7-DIP Yes -25 to +85 320mA 5W 7W 4W 5W 32 Yes -25 to +85 320mA 32 5W 7W 4W 5W Replaces Devices FSD210B FSD210HD
FSQ510H 8-DIPH
Notes: 1. The junction temperature can limit the maximum output power. 2. 230VAC or 100/115VAC with doubler. 3. Typical continuous power in a non-ventilated enclosed adapter measured at 50C ambient. 4. Maximum practical continuous power in an open-frame design at 50C ambient temperature.
(c) 2006 Fairchild Semiconductor Corporation FSCQ510, FSCQ510H Rev. 0.0.3
www.fairchildsemi.com
PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
Application Circuit
Vo
AC IN VSTR D
PWM
Sync VFB GND
VCC
Figure 1. Typical Application Circuit
Internal Block Diagram
Sync 4 (3)
+
VSTR 8 (1)
Vcc 5 (7)
D 7 (8)
0.7V / 0.1V
+
OSC
+
0.75 / 0.85V VBurst
Vref Vref IFB
Vref Vcc good
-
-
8.7V / 6.7V
VFB 3 (2)
Idelay
PWM 6R R
S R Q
Q
Gate driver
LEB 360ns
0.4V
AOCP TSD 1,2 (4,5,6) GND
VSD 4.5V
2.5us time delay Vcc good
S R
Q
Vocp (0.8V) Soft Start (5ms)
Q
A(B): A stands for the pin number for 7-DIP B stands for the pin number for 8-DIPH
Figure 2. Internal Block Diagram
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
Pin Assignments
GND GND
VSTR D
VSTR VFB
D VCC
FSQ510
VFB Sync VCC Sync GND
FSQ510H
GND GND
Figure 3. Package diagrams for FSQ510 and FSQ510H
Pin Definitions
Pin #
1,2
(5)
Name
GND
Description
This pin is the control ground and the SenseFET source. This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 4.5V, the overload protection triggers, which shuts down the FPS. This pin is internally connected to the sync-detect comparator for quasiresonant switching. In normal quasi-resonant operation, the threshold of the sync comparator is 0.7V/0.1V. This pin is the positive supply input. This pin provides internal operating current for both start-up and steady-state operation. High-voltage power SenseFET drain connection. This pin is connected directly, or through a resistor, to the high-voltage DC link. At startup, the internal high-voltage current source supplies internal bias and charges the external capacitor connected to the VCC pin. Once VCC reaches 8.7V, the internal current source is disabled.
(4,5,6)(6)
3 (2)
VFB
4 (3) 5 (7) 7 (8) 8 (1)
Sync VCC D VSTR
Notes: 5. Pin numbers for 7-DIP. 6. Pin numbers for 8-DIPH are in parenthesis.
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
Absolute Maximum Ratings
The "Absolute Maximum Ratings" are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings. The "Recommended Operating Conditions" table defines the conditions for actual device operation.
Symbol
VSTR VDS VCC VFB VSync PD TJ TA TSTG
Parameter
VSTR Pin Voltage Drain Pin Voltage Supply Voltage Feedback Voltage Range Sync Pin Voltage Total Power Dissipation Operating Junction Temperature Operating Ambient Temperature Storage Temperature
Min.
700 700
Max.
Unit
V V
20 -0.3 -0.3 6.5 6.5 +150 -25 -55 +85 +150
V V V W C C C
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
Electrical Characteristics
T
T J = 25C unless otherwise specified.
Symbol
Parameter
Conditions
VCC = 0V, ID = 100A VDS = 700V TJ = 25C, ID = 180mA TJ = 100C, ID = 180mA VGS = 11V VDS = 40V VDS = 350V, ID = 25mA VDS = 350V, lD = 25mA VCC = 11V, VFB = 0.5V - 25C < TJ < 125C VCC = 11V, VFB = 0V VCC = 11V, VFB = 1V, Vsync oscillation VCC = 11V, VFB = 1V, Vsync oscillation VCC = 11V, VFB = 3V VCC = 11V, VFB = 0V VFB = 0V, VCC sweep After Turn-on, VFB = 0V VSTR = 40V, VCC sweep
Min.
700
Typ.
Max.
Unit
V
SenseFET Section BVDSS Drain-Source Breakdown Voltage IDSS RDS(ON) CISS COSS tr tf Zero-Gate-Voltage Drain Current Drain-Source On-State Resistance Input Capacitance Output Capacitance(7) Rise Time(7) Fall Time(7)
(7)
100 28 42 96 28 100 50 87.7 200 7.2 2.8 54 8.0 6.0 3 0.75 0.65 93.5 5 225 7.7 3.0 60 8.7 6.7 5 0.85 0.75 100 320 4.5 5 360 0.8 140 60 100 8 250 8.2 3.2 66 0 9.4 7.4 7 0.95 0.85 32 48
A
pF pF ns ns kHz % A s s % % V V ms V V mV mA V A ns V C C 0.85 0.15 220 900 1.2 700 V V ns A mA V
Control Section fS Initial Switching Frequency Switching Frequency Variation(7) fS IFB tBB tBW DMAX DMIN VSTART VSTOP tS/S Feedback Source Current Switching Blanking Time Quasi-Resonant-Detection-Window Time Maximum Duty Ratio Minimum Duty Ratio UVLO Threshold Voltage Internal Soft-Start Time
Burst-Mode Section VBURH Burst-Mode Voltage VBURL Hys. Protection Section ILIM Peak Current Limit VSD IDELAY tLEB VOCP TSD Hys. Shutdown Feedback Voltage Shutdown Delay Current Leading Edge Blanking Time(7) Over-Current Latch Voltage(7) Thermal Shutdown Temperature(7)
VCC = 11V, VFB sweep
di/dt = 150mA/s VDS = 40V, VCC = 11V, VFB sweep VCC = 11V, VFB = 5V
280 4.0 4 130
360 5.0 6 150
Sync Section VSH Sync Threshold Voltage VSL tSync Sync Delay Time Total Device Section Operating Supply Current (Control IOP Part Only) ICH Start-up Charging Current VSTR Supply Voltage
VCC = 11V, VFB = 1V VCC = 11V, VFB = 1V
0.55 0.05 180
0.7 0.1 200 500 1
VCC = 11V, VFB = 3V VCC = VFB = 0V, VSTR = 40V VCC = VFB = 0V, VSTR sweep
50
Notes: 7. These parameters, although guaranteed, are not 100% tested in production
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3 www.fairchildsemi.com 5
PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
Comparison between FSD210B and FSQ510
Function
Control Mode Operation Method EMI Reduction Method Soft Start
FSD210B
Voltage Mode Constant Frequency PWM Frequency Modulation 3ms (Built-in)
FSQ510
Current Mode Quasi-Resonant Operation Valley Switching
Advantages of FSQ510
Fast response Easy to design control loop Turn-on at minimum drain voltage High efficiency Frequency variation depending on the ripple of DC link voltage High efficiency and low EMI
5ms (Built-in) TSD with hysteresis AOCP
Longer soft-start time Enhanced Thermal Shutdown protection Abnormal Over-Current protection
Protection
TSD
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
www.fairchildsemi.com 6
PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
Functional Description
1. Startup: At startup, an internal high-voltage current source supplies the internal bias and charges the external capacitor (Ca) connected to the VCC pin, as illustrated in Figure 4. When VCC reaches 8.7V, the FPS begins switching and the internal high-voltage current source is disabled. The FPS continues normal switching operation and the power is supplied from the auxiliary transformer winding unless VCC goes below the stop voltage of 6.7V.
VDC
Vcc Vref IFB
OSC
2.2 Leading Edge Blanking (LEB): At the instant the internal SenseFET is turned on, a high-current spike usually occurs through the SenseFET, caused by primary-side capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the Rsense resistor would lead to incorrect feedback operation in the current mode PWM control. To counter this effect, the FPS employs a leading edge blanking (LEB) circuit. This circuit inhibits the PWM comparator for a short time (tLEB) after the SenseFET is turned on.
Ca
Vo Vfb
H11A817A
CB
Idelay
3 D1 D2 6R + Vfb*
SenseFET
Vcc 5 8
VSTR
KA431
R
Gate driver
-
ICH
VSD
OLP
Rsense
6.7V/ 8.7V
Vref Vcc good
Figure 5. Pulse-Width Modulation (PWM) Circuit
Internal Bias
Figure 4. Startup Block 2. Feedback Control: FPS employs current mode control, as shown in Figure 5. An opto-coupler (such as the H11A817A) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the Rsense resistor makes it possible to control the switching duty cycle. When the reference pin voltage of the shunt regulator exceeds the internal reference voltage of 2.5V, the opto-coupler LED current increases, pulling down the feedback voltage and reducing the duty cycle. This event typically occurs when the input voltage is increased or the output load is decreased. 2.1 Pulse-by-Pulse Current Limit: Because current mode control is employed, the peak current through the SenseFET is limited by the inverting input of PWM comparator (Vfb*), as shown in Figure 5. Assuming that the 225A current source flows only through the internal resistor (6R + R = 11 k), the cathode voltage of diode D2 is about 2.5V. Since D1 is blocked when the feedback voltage (Vfb) exceeds 2.5V, the maximum voltage of the cathode of D2 is clamped at this voltage, thus clamping Vfb*. Therefore, the peak value of the current through the SenseFET is limited.
3. Synchronization: The FSQ-series employs a quasiresonant switching technique to minimize the switching noise and loss. The basic waveforms of the quasiresonant converter are shown in Figure 6. To minimize the MOSFET's switching loss, the MOSFET should be turned on when the drain voltage reaches its minimum value, as shown in Figure 6. The minimum drain voltage is indirectly detected by monitoring the VBCC winding voltage, as shown in Figure 6.
B
VDS
VRO VRO
VDC
VSync
TF
0.7V 0.1V 200ns Delay MOSFET Gate
ON
ON
Figure 6. Quasi-Resonant Switching Waveforms
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
4. Protection Circuits: The FSQ-series has several self-protective functions, such as Overload Protection (OLP), Abnormal Over-Current Protection (AOCP), and Thermal Shutdown (TSD). All the protections are implemented as auto-restart mode. Once the fault condition is detected, switching is terminated and the SenseFET remains off. This causes VCC to fall. When VBCC falls down to the Under-Voltage Lockout (UVLO) stop voltage of 6.7V, the protection is reset and the start-up circuit charges the VCC capacitor. When VCC reaches the start voltage of 8.7V, the FSQ-series resumes normal operation. If the fault condition is not removed, the SenseFET remains off and VCC drops to stop voltage again. In this manner, the auto-restart can alternately enable and disable the switching of the power SenseFET until the fault condition is eliminated. Because these protection circuits are fully integrated into the IC without external components, the reliability is improved without increasing cost.
B
feedback voltage (Vfb). If Vfb exceeds 2.5V, D1 is blocked and the 5A current source starts to charge CB slowly up to VCC. In this condition, Vfb continues increasing until it reaches 4.5V, when the switching operation is terminated, as shown in Figure 8. The delay time for shutdown is the time required to charge CB from 2.5V to 4.5V with 5A. A 20 ~ 50ms delay time is typical for most applications. This protection is implemented in auto restart mode.
VFB
4.5V
Overload protection
2.8V
Vds
Power on
Fault occurs
Fault removed
T12= CB*(6.0-2.8)/Idelay
T1
T2
t
Figure 8. Overload Protection 4.2 Abnormal Over-Current Protection (AOCP): When the secondary rectifier diodes or the transformer pins are shorted, a steep current with extremely high di/dt can flow through the SenseFET during the LEB time. Even though the FSQ-series has OLP (Overload Protection), it is not enough to protect the FSQ-series in this abnormal case, since severe current stress is imposed on the SenseFET until OLP triggers. The FSQ-series has an internal AOCP circuit, as shown in Figure 9. When the gate turn-on signal is applied to the power SenseFET, the AOCP block is enabled and monitors the current through the sensing resistor. The voltage across the resistor is compared with a preset AOCP level. If the sensing resistor voltage is greater than the AOCP level, the set signal is applied to the latch, resulting in the shutdown of the SMPS.
Vcc
8.7V 6.7V
t
Normal operation Fault situation Normal operation
Figure 7. Auto Restart Protection Waveforms 4.1 Overload Protection (OLP): Overload is defined as the load current exceeding its normal level due to an unexpected abnormal event. In this situation, the protection circuit should trigger to protect the SMPS. However, even when the SMPS is in the normal operation, the overload protection circuit can be triggered during the load transition. To avoid this undesired operation, the overload protection circuit is designed to trigger only after a specified time to determine whether it is a transient situation or a true overload situation. Because of the pulse-by-pulse current limit capability, the maximum peak current through the SenseFET is limited, and therefore the maximum input power is restricted with a given input voltage. If the output consumes more than this maximum power, the output voltage (Vo) decreases below the set voltage. This reduces the current through the opto-coupler LED, which also reduces the opto-coupler transistor current, thus increasing the
6R
OSC
PWM
S
Q
R
Q
Gate driver
R
LEB
Rsense 2 Vaocp GND AOCP
+
Figure 9. Abnormal Over-Current Protection
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
4.3 Thermal Shutdown (TSD): The SenseFET and the control IC in one package makes it easy for the control IC to detect the abnormal over temperature of the SenseFET. If the temperature exceeds approximately 140C, the thermal shutdown triggers. The FPS stops its operation at that time. The FPS operates in auto-restart mode until the temperature decreases to around 80C. Then the normal operation of the FPS resumes. 5. Soft Start: The FPS has an internal soft-start circuit that increases PWM comparator inverting input voltage, together with the SenseFET current, slowly after it starts up. The typical soft-start time is 5ms. The pulse width to the power switching device is progressively increased to establish the correct working conditions for transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased with the intention of smoothly establishing the required output voltage. This helps prevent transformer saturation and reduce stress on the secondary diode during startup. 6. Burst-Mode Operation: To minimize power dissipation in standby mode, the FPS enters burst-mode operation. As the load decreases, the feedback voltage decreases. As shown in Figure 10, the device automatically enters burst mode when the feedback voltage drops below VBURL (750mV). At this point, switching stops and the output voltages start to drop at a rate dependent on standby current load. This causes the feedback voltage to rise. Once it passes VBURH (850mV), switching resumes. The feedback voltage then falls and the process repeats. Burst-mode operation alternately enables and disables switching of the power SenseFET, thereby reducing switching loss in standby mode.
Vo
Vose
t
VFB
0.85V 0.75V
Ids
Vds
time
T 1
Switching disabled
T 2
T 3
Switching disabled
T 4
Figure 10. Burst-Mode Operation
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
7. Advanced Quasi-Resonant Operation: To minimize switching loss and Electromagnetic Interference (EMI), the MOSFET turns on when the drain voltage reaches its minimum value in QRC converters. Due to Discontinuous Conduction Mode (DCM) operation, the feedback voltage is not changed, despite the DC link voltage ripples, if the load condition is not changed. Since the slope of the drain current is changed depending on the DC link voltage, the turn-on duration of MOSFET is variable with the DC link voltage ripples. The switching period is changed continuously with the DC link voltage ripples. Not only the switching at the instant of the minimum drain voltage, but also the continuous change of the switching period, reduces EMI. So QRC converters can scatter the EMI spectrum inherently. Typical products for QRC turn on the MOSFET when the first valley is detected. In this case, the range of the switching frequency is very wide as a result of the load variations. At a very light load, for example, the switching frequency can be as high as several hundred kHz. Some products for QRC, such as Fairchild's FSCQ-series, define the turn-on instant of SenseFET change at the first valley into at the second valley when the load condition decreases under its predetermined level. The range of switching frequency narrows somewhat. For details, consult an FSCQ-series datasheet at: http://www.fairchildsemi.com/pf/FS/FSCQ1265RT.html The range of the switching frequency can be limited tightly in FSQ-series. Because a kind of blanking time (tB) is adopted, as shown in Figure 11, the switching frequency has minimum and maximum values. Once the SenseFET is enabled, the next start is prohibited during the blanking time (tB). After the blanking time, the controller finds the first valley within the duration of the quasi-resonant detection window time (tW ) (Case A, B, and C). If no valley is found in tW , the internal SenseFET is forced to turn on at the end of tBW (Case D). Therefore, FSQ510 and FSQ510H have minimum switching frequency of 93.5kHz and maximum switching frequency of 130kHz, as shown in Figure 12.
Tsmax=10.7us Ids Ids
A
tB=7.7us Ts
Ids
Ids
B
tB=7.7us Ts
Ids
Ids
C
tB=7.7us Ts
Ids
Ids
tB=7.7us
D
tW=3us
Tsmax=10.7us
Figure 11. Advanced QRC Operation
When the resonant period is 2us
130kHz
A
103kHz 93.5kHz
B
C
Constant frequency
D
Burst mode
Po
Figure 12. Switching Frequency Range of the Advanced QRC
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
Application Information
Application
Cellular Phone Charger
Output Power
3.3W
Input Voltage
Universal Input (85-265Vac)
Output Voltage (Max Current)
5.1V (650mA)
Features
Low-cost, no Y-cap, cellular phone charger with CC/CV function Meets CISPR-22 Class-B requirement at full-load condition Meets CEC & Energy Star EPS program (arithmetic average of efficiencies at 25%, 50%, 75%, and 100% of full load - measured at the end of 0.2 /1.5m load line, enclosed in plastic case, room temperature, still air) Extremely low no-load standby power (<60mW at universal input)
Key Design Notes
The constant voltage (CV) mode control is implemented with resistors R2, R4, R5, and R6; feedback capacitor C8; shunt regulator of U1; and opto-coupler U3. The constant current (CC) mode control is designed with resistors R2, R4, R10, R11, R13, and R14; NPN transistor Q1; and NTC THR1. The divided bias winding voltage is applied to the sync pin with resistor R12, R15, and R16. The capacitor C9 is added to delay the divided bias winding for switching at the minimum drain voltage. The diode D7 is used to avoid a significant negative voltage on the sync pin.
1. Schematic
Figure 13. FSQ510 Schematic
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
2. Transformer Construction Core: EE1616 (PM7/ Ae=20.5mm2) Bobbin: Horizontal 8 pins, 4 pins at each side, 10mm width (bobbin wall-to-wall)
1 8 2mm 2mm
Top
Tape 4T
Np
Ns Ncc
4 7
2 3
7
Ns Shield Np
3 8 4
Tape 2T Tape 2T Tape 1T Tape 4T
Ncc Shield 4
1 2 1
Bottom
Figure 14. Transformer Construction Illustration
3. Winding Specifications
Pin (S F)
Shield Np Shield Ns 1X 21 4X 86
Wire
0.16x1 0.16x1 Copper 8mmx 0.05t 0.55x1
Turns
48 Ts 92 Ts 0.9 Ts 5 Ts
Winding Method
Solenoid winding Solenoid winding Copper Plate Solenoid winding Barrier Tape 2mm Center Solenoid winding Barrier Tape 2mm
Insulation: Polyester Tape t = 0.025mm, 4 Layers Insulation: Polyester Tape t = 0.025mm, 1 Layer Insulation: Polyester Tape t = 0.025mm, 2 Layers
Insulation: Polyester Tape t = 0.025mm, 2 Layers Ncc 34 0.16x2 11 Ts
Insulation: Polyester Tape t = 0.025mm, 4 Layers
4. Electrical Characteristics
Pin
Inductance Leakage 12 12
Specification
1.2mH 10% 60H maximum
Remark
100kHz, 1V Short 2nd pins
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
5. BOM List
Number
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
Quantity
2 1 1 1 1 1 1 1 1 1 5 2 1 1 1 1 1 1 1 1 1 1 1 1 3 1 2 1 1 1 1 1 1 1 1
Description
Electrolytic Cap. Electrolytic Cap. Electrolytic Cap. Ceramic Cap. Electrolytic Cap. Electrolytic Cap. Ceramic Cap. Ceramic Cap. Film Cap. Schottky Diode Diode Diode Coil Coil Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Shunt Regulator Control IC Opto-coupler Transistor Thermister Transformer
Reference Number
C1, C2 C3 C4 C5 C6 C7 C8 C9 CS2 D1 D2, D3, D4, D5, DS1 D6, D7 L1 L2 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11, R13, R14 R12 R15, R16 RS2 RS4 U1 U2 U3 Q1 THR1 TX1
Part Type
4.7F, 400V 680F, 16V 68F, 16V 2.2F 4.7F, 50V 47F, 50V 47nF 39pF 1nF, 1kV SB240 1N4007 1N4148 330H 3.9H 4.7k , 1/4W, 5% 50 , 1/4W, 5% 2.4k , 2W, 5% 1k , 1/4W, 5% 2.2k , 1/4W, 1% 2k , 1/4W, 1% 5 , 1/4W, 5% 300 , 1/4W, 5% 150 , 1/4W, 5% 510 , 1/4W, 5% 3 , 1/4W, 1% 27k , 1/8W, 5% 6k , 1/8W, 5% 200k , 1/4W, 5% 10 , 1/4W, 5% TL431A FSQ510 PC817A KSP2222A 10KD-5 EE1616
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
Package Dimensions
Figure 15. FSQ510 7-DIP
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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PRELIMINARY DATASHEET
FSQ510, FSQ510H Green Mode Fairchild Power Switch (FPSTM) for Quasi-Resonant Converter
(c) 2006 Fairchild Semiconductor Corporation FSQ510, FSQ510H Rev. 0.0.3
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